Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7434GPBF IRFB7434GPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1046822-IRFB7434GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 250μA
Max Gate Charge: 324nC @ 10V
Max Input Capacitance: 10820pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

40V StrongIRFET N-Channel Power MOSFET

N-Channel 40V 195A (Tc) Through Hole TO-220-3

MOSFET N CH 40V 195A TO220AB Product overview: IRFB7434GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB7434GPBF can be used for catalog matching and distributor lookup.