onsemi Single Bipolar Transistors KSB1151YSTSTU

Description
Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSB1151YSTSTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSB1151YSTSTU-ND
Single Bipolar Transistors KSB1151YSTSTU-ND
Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3

Buy Now Datasheet
 - KSB1151YSTSTU - Rochester Electronics
Newburyport, MA, United States
PNP Bipolar Power Transistor

PNP Bipolar Power Transistor

Supplier's Site Datasheet
Singapore
60V 5A Bipolar Transistor
276-KSB1151YSTSTU
60V 5A Bipolar Transistor 276-KSB1151YSTSTU
TRANS PNP 60V 5A TO126-3 Product overview: KSB1151YSTSTU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSB1151YSTSTU can be used for catalog matching and distributor lookup.

TRANS PNP 60V 5A TO126-3 Product overview: KSB1151YSTSTU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSB1151YSTSTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSB1151YSTSTU - 290926-KSB1151YSTSTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSB1151YSTSTU
290926-KSB1151YSTSTU
TRANSISTORS - Transistors (BJT) - Single - KSB1151YSTSTU 290926-KSB1151YSTSTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 290926-KSB1151YSTSTU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126-3 Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 300mV @ 200mA, 2A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 160 @ 2A, 1V Maximum Power Dissipation: 1.3W Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Quantity per package: 60

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 290926-KSB1151YSTSTU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 300mV @ 200mA, 2A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 160 @ 2A, 1V
Maximum Power Dissipation: 1.3W
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Quantity per package: 60

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSB1151YSTSTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSB1151YSTSTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSB1151YSTSTU
TRANS PNP 60V 5A TO126-3

TRANS PNP 60V 5A TO126-3

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number KSB1151YSTSTU-ND KSB1151YSTSTU 276-KSB1151YSTSTU 290926-KSB1151YSTSTU KSB1151YSTSTU
Product Name Single Bipolar Transistors 60V 5A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - KSB1151YSTSTU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP
Package Type TO-225AA, TO-126-3 SIP3 Bulk SOT3; TO-126-3
Packing Method Bulk Tube; Tube
IC(max) 5000 milliamps 5000 milliamps
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