Renesas Electronics Corporation MOSFET Transistor NP88N04NUG-S18-AY

NP88N04NUG-S18-AY - MOS FIELD EF Product overview: NP88N04NUG-S18-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP88N04NUG-S18-AY can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083357-NP88N04NUG-S18-AY
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 88A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 250nC @ 10V
Max Input Capacitance: 15000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.4 mOhm @ 44A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance