Infineon Technologies AG Single FETs, MOSFETs IRFH4210DTRPBF

Description
N-Channel 25V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)
Request a Quote Datasheet
Description
N-Channel 25V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFH4210DTRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH4210DTRPBFTR-ND
Single FETs, MOSFETs IRFH4210DTRPBFTR-ND
N-Channel 25V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)

N-Channel 25V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - IRFH4210DTRPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH4210DTRPBFCT-ND
Single FETs, MOSFETs IRFH4210DTRPBFCT-ND
MOSFET N-CH 25V 44A PQFN

MOSFET N-CH 25V 44A PQFN

Buy Now Datasheet
 - IRFH4210DTRPBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
 - IRFH4210DTRPBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4210DTRPBF - 1046857-IRFH4210DTRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4210DTRPBF
1046857-IRFH4210DTRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4210DTRPBF 1046857-IRFH4210DTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046857-IRFH4210DTRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 125W (Tc) Family Name: IRFH4210D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 44A (Ta) Gate-Source Threshold Voltage: 2.1V @ 100μA Max Gate Charge: 77nC @ 10V Max Input Capacitance: 4812pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.1 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): SiRA24DP-T1-GE3; AP2602CMT; CSD16415Q5T; CSD16415Q5; Introduction Date: May 20, 2013 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046857-IRFH4210DTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Family Name: IRFH4210D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 44A (Ta)
Gate-Source Threshold Voltage: 2.1V @ 100μA
Max Gate Charge: 77nC @ 10V
Max Input Capacitance: 4812pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.1 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): SiRA24DP-T1-GE3; AP2602CMT; CSD16415Q5T; CSD16415Q5;
Introduction Date: May 20, 2013
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 25V Single N-Ch HEXFET PWR 50A

MOSFET 25V Single N-Ch HEXFET PWR 50A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH4210DTRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH4210DTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH4210DTRPBF
MOSFET N-CH 25V 44A PQFN

MOSFET N-CH 25V 44A PQFN

Supplier's Site
Mosfet, N Channel, 25V, 44A, Pqfn-5; Channel Type Infineon - 19X2753 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 25V, 44A, Pqfn-5; Channel Type Infineon
19X2753
Mosfet, N Channel, 25V, 44A, Pqfn-5; Channel Type Infineon 19X2753
MOSFET, N CHANNEL, 25V, 44A, PQFN-5; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:44A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

MOSFET, N CHANNEL, 25V, 44A, PQFN-5; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:44A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFH4210DTRPBFTR-ND IRFH4210DTRPBF 1046857-IRFH4210DTRPBF IRFH4210DTRPBF IRFH4210DTRPBF 19X2753
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4210DTRPBF MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 25V, 44A, Pqfn-5; Channel Type Infineon
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type 8-PowerTDFN TDSON8 SOT3; PQFN (5x6) 8-PowerTDFN TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT)
V(BR)DSS 25 volts
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