Infineon Technologies AG Single FETs, MOSFETs IRFH4210DTRPBF

Description
Power Field-Effect Transistor
Request a Quote Datasheet
Description
Power Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - IRFH4210DTRPBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
 - IRFH4210DTRPBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFH4210DTRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH4210DTRPBFTR-ND
Single FETs, MOSFETs IRFH4210DTRPBFTR-ND
N-Channel 25V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)

N-Channel 25V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - IRFH4210DTRPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH4210DTRPBFCT-ND
Single FETs, MOSFETs IRFH4210DTRPBFCT-ND
MOSFET N-CH 25V 44A PQFN

MOSFET N-CH 25V 44A PQFN

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4210DTRPBF - 1046857-IRFH4210DTRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4210DTRPBF
1046857-IRFH4210DTRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4210DTRPBF 1046857-IRFH4210DTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046857-IRFH4210DTRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 125W (Tc) Family Name: IRFH4210D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 44A (Ta) Gate-Source Threshold Voltage: 2.1V @ 100μA Max Gate Charge: 77nC @ 10V Max Input Capacitance: 4812pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.1 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): SiRA24DP-T1-GE3; AP2602CMT; CSD16415Q5T; CSD16415Q5; Introduction Date: May 20, 2013 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046857-IRFH4210DTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Family Name: IRFH4210D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 44A (Ta)
Gate-Source Threshold Voltage: 2.1V @ 100μA
Max Gate Charge: 77nC @ 10V
Max Input Capacitance: 4812pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.1 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): SiRA24DP-T1-GE3; AP2602CMT; CSD16415Q5T; CSD16415Q5;
Introduction Date: May 20, 2013
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 25V Single N-Ch HEXFET PWR 50A

MOSFET 25V Single N-Ch HEXFET PWR 50A

Buy Now Datasheet
Mosfet, N Channel, 25V, 44A, Pqfn-5; Channel Type Infineon - 19X2753 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 25V, 44A, Pqfn-5; Channel Type Infineon
19X2753
Mosfet, N Channel, 25V, 44A, Pqfn-5; Channel Type Infineon 19X2753
MOSFET, N CHANNEL, 25V, 44A, PQFN-5; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:44A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

MOSFET, N CHANNEL, 25V, 44A, PQFN-5; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:44A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH4210DTRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH4210DTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH4210DTRPBF
MOSFET N-CH 25V 44A PQFN

MOSFET N-CH 25V 44A PQFN

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFH4210DTRPBF IRFH4210DTRPBFTR-ND 1046857-IRFH4210DTRPBF IRFH4210DTRPBF 19X2753 IRFH4210DTRPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4210DTRPBF MOSFET Mosfet, N Channel, 25V, 44A, Pqfn-5; Channel Type Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type TDSON8 8-PowerTDFN SOT3; PQFN (5x6) TO-3 8-PowerTDFN
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT)
Polarity N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts
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