Power Field-Effect Transistor Product overview: IRFH4210DTRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH4210DTRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1046857-IRFH4210DTRP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Family Name: IRFH4210D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 44A (Ta)
Gate-Source Threshold Voltage: 2.1V @ 100μA
Max Gate Charge: 77nC @ 10V
Max Input Capacitance: 4812pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.1 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): SiRA24DP-T1-GE3; AP2602CMT; CSD16415Q5T; CSD16415Q5;
Introduction Date: May 20, 2013
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Power Field-Effect Transistor
Power Field-Effect Transistor
N-Channel 25V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)
MOSFET N-CH 25V 44A PQFN
MOSFET 25V Single N-Ch HEXFET PWR 50A
MOSFET, N CHANNEL, 25V, 44A, PQFN-5; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:44A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
MOSFET N-CH 25V 44A PQFN
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFH4210DTRPBF | 1046857-IRFH4210DTRPBF | IRFH4210DTRPBF | IRFH4210DTRPBFTR-ND | IRFH4210DTRPBF | 19X2753 | IRFH4210DTRPBF |
| Product Name | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4210DTRPBF | Single FETs, MOSFETs | MOSFET | Mosfet, N Channel, 25V, 44A, Pqfn-5; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| PD | 3500 milliwatts | 3500 to 125000 milliwatts | |||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 25 volts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) |
