Infineon Technologies AG FETs - Single - IRFB7440GPBF IRFB7440GPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187513-IRFB7440GPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 208W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 40V Id - Continuous Drain Current: 120A Rds On (Maximum) at Id, Vgs: 2.5mOhm at 100A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.9V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 135nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4730pF at 25V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187513-IRFB7440GPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 208W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 40V Id - Continuous Drain Current: 120A Rds On (Maximum) at Id, Vgs: 2.5mOhm at 100A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.9V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 135nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4730pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFB7440GPBF - 1187513-IRFB7440GPBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFB7440GPBF
1187513-IRFB7440GPBF
FETs - Single - IRFB7440GPBF 1187513-IRFB7440GPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187513-IRFB7440GPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 208W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 40V Id - Continuous Drain Current: 120A Rds On (Maximum) at Id, Vgs: 2.5mOhm at 100A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.9V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 135nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4730pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187513-IRFB7440GPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 208W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 40V
Id - Continuous Drain Current: 120A
Rds On (Maximum) at Id, Vgs: 2.5mOhm at 100A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.9V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 135nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4730pF at 25V

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Newburyport, MA, United States
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

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Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB7440GPBF-ND - DigiKey
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Single FETs, MOSFETs
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB7440GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB7440GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB7440GPBF
MOSFET N CH 40V 120A TO220AB

MOSFET N CH 40V 120A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET, 40V, 120A, 2 90 nC Qg, TO-220AB

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Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1187513-IRFB7440GPBF IRFB7440GPBF IRFB7440GPBF-ND IRFB7440GPBF IRFB7440GPBF
Product Name FETs - Single - IRFB7440GPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 40 volts
PD 208000 milliwatts
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