Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel 40V 120A (Tc) 208W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 1187513-IRFB7440GPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 208W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 40V
Id - Continuous Drain Current: 120A
Rds On (Maximum) at Id, Vgs: 2.5mOhm at 100A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.9V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 135nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4730pF at 25V
MOSFET MOSFET, 40V, 120A, 2 90 nC Qg, TO-220AB
MOSFET N CH 40V 120A TO220AB
| Rochester Electronics | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFB7440GPBF | IRFB7440GPBF-ND | 1187513-IRFB7440GPBF | IRFB7440GPBF | IRFB7440GPBF |
| Product Name | Single FETs, MOSFETs | FETs - Single - IRFB7440GPBF | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3 | 135 nC @ 10 V | |
| Packing Method | Tube; Tube | Tube; Tube | Tube; Tube |
