N-Channel 650V 30A (Tc) 240W (Tc) Surface Mount D²PAK-3 (TO-263-3)
N-Channel 650V 30A (Tc) 240W (Tc) Surface Mount D²PAK-3 (TO-263-3)
N-Channel 650V 30A (Tc) 240W (Tc) Surface Mount D²PAK-3 (TO-263-3)
Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 30 A, 110 mΩ, D2PAK, 800-REEL Product overview: NTB110N65S3HF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 30 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 30 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB110N65S3HF can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 30A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Win Source Part Number: 1021367-NTB110N65S3H
Category: Discrete Semiconductor Products>Transistors
Series: FRFET®, SuperFET® III
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 740µA
Power Dissipation (Max): 240W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK-3 (TO-263-3)
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NTB110N65S3HFOSTR,NT
Base Product Number: NTB110
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 30A D2PAK-3
MOSFET, N-CH, 650V, 30A, 150DEG C, 240W; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
SUPERFET3 650V FRFET,110MOHM, TO263 / REEL ROHS COMPLIANT: YES
MOSFET SUPERFET3 650V FRFET,110M
| DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTB110N65S3HFOSDKR-ND | 278-NTB110N65S3HF | NTB110N65S3HF | 1021367-NTB110N65S3HF | NTB110N65S3HF | 97AC7883 | 85AC3059 | NTB110N65S3HF |
| Product Name | Single FETs, MOSFETs | N-Channel 650 V 30 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 30A, 150Deg C, 240W; Transistor Polarity Onsemi | Superfet3 650V Frfet,110Mohm, To263 / Reel Rohs Compliant Onsemi | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-252 (DPAK) | TO-3 | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| rDS(on) | 0.1100 ohms | 0.0980 ohms |
