MOSFET P-CH 55V 31A IPAK Product overview: IRFU5305PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU5305PBF can be used for catalog matching and distributor lookup.
P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)
Manufacturer: Infineon Technologies
Win Source Part Number: 016568-IRFU5305PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 65 mOhm @ 16A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET P-CH 55V 31A IPAK
MOSFET MOSFT P-Ch -55V -28A 65mOhm 42nC
MOSFET, P-CH, 55V, 22A, 175DEG C, 69W; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET P-CH 55V 31A IPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFU5305PBF | IRFU5305PBF-ND | 016568-IRFU5305PBF | IRFU5305PBF | 5429951 | 5429951P | IRFU5305PBF | IRFU5305PBF | 38K2689 | IRFU5305PBF |
| Product Name | 55V 31A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU5305PBF | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 55V, 22A, 175Deg C, 69W; Channel Type Infineon | Single FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | |||||||
| Transconductance | 0.0080 kS | |||||||||
| PD | 110 milliwatts | 110000 milliwatts | 110000 milliwatts |
