MOSFET N-CH 100V 24A TO220AB FP Product overview: IRFI1310NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI1310NPBF can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 24A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel 100V 24A (Tc) 56W (Tc) Through Hole TO-220AB Full-Pak
Manufacturer: Infineon Technologies
Win Source Part Number: 137535-IRFI1310NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB Full-Pak
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 1900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 36 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 24A TO220AB FP
MOSFET N-CH 100V 24A TO220AB FP
MOSFET, N, 100V, 22A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET MOSFT 100V 22A 36mOhm 80nC
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFI1310NPBF | IRFI1310NPBF | IRFI1310NPBF-ND | 137535-IRFI1310NPBF | IRFI1310NPBF | 2626752P | IRFI1310NPBF | 38K2519 | IRFI1310NPBF |
| Product Name | 100V 24A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI1310NPBF | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N, 100V, 22A, To-220Fp; Transistor Polarity Infineon | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||||
| PD | 45 milliwatts | 56000 milliwatts | 56000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
