onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220BTM IRFR220BTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069530-IRFR220BTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 390pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220BTM - 069530-IRFR220BTM - Win Source Electronics
    Win Source Electronics
  • IRFR220BTM - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR220BTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single FETs, MOSFETs - IRFR220BTM - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069530-IRFR220BTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 390pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220BTM - 069530-IRFR220BTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220BTM
069530-IRFR220BTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220BTM 069530-IRFR220BTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069530-IRFR220BTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 390pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 069530-IRFR220BTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 390pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel MOSFET Transistor
278-IRFR220BTM
N-Channel MOSFET Transistor 278-IRFR220BTM
N-CHANNEL POWER MOSFET Product overview: IRFR220BTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR220BTM can be used for catalog matching and distributor lookup.

N-CHANNEL POWER MOSFET Product overview: IRFR220BTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR220BTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
- IRFR220BTM - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
IRFR220BTM
IRFR220BTM
Power Field-Effect Transistor, N-Channel, MOSFET

Power Field-Effect Transistor, N-Channel, MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR220BTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR220BTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR220BTM
N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

Supplier's Site
Single FETs, MOSFETs - IRFR220BTM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFR220BTM
Single FETs, MOSFETs IRFR220BTM
N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069530-IRFR220BTM 278-IRFR220BTM IRFR220BTM IRFR220BTM IRFR220BTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220BTM N-Channel MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 2500 to 40000 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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