IRFZ34 - 12V-300V N-Channel Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 093352-IRFZ34NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 68W (Tc)
Family Name: IRFZ34
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 29A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): IRFZ34; IRFZ34PbF; BUK7535-55A,127; BUK7535-55A;
Introduction Date: November 03, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management
MOSFET N-CH 55V 29A TO220AB Product overview: IRFZ34NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ34NPBF can be used for catalog matching and distributor lookup.
N-Channel 55V 29A (Tc) 68W (Tc) Through Hole TO-220AB
MOSFET N-CH 55V 29A TO220AB
MOSFET N-CH 55V 29A TO220AB
N CHANNEL MOSFET, 55V, 29A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET MOSFT 55V 26A 40mOhm 22.7nC
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 29A I(D), 55V, 0.04OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
55V 29A 68W 40mΩ@10V,16A 4V@250uA N Channel TO-220AB MOSFETs ROHS
MOSFET N-CH 55V 29A TO-220AB
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V
| Rochester Electronics | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | LCSC Electronics Technology (HK) Limited | Utmel Electronic Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFZ34NPBF | 093352-IRFZ34NPBF | 278-IRFZ34NPBF | IRFZ34NPBF-ND | IRFZ34NPBF | 5409761 | IRFZ34NPBF | 63J7120 | IRFZ34NPBF | 17624691 | IRFZ34NPBF | 376-IRFZ34NPBF | 70017051 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ34NPBF | 55V 29A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 55V, 29A To-220Ab; Channel Type Infineon | MOSFET | Transistor | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET N-CH 55V 29A TO-220AB | MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO22 | TO-220; SOT3; TO-220AB | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220-3 | TO-3; TO-220 | TO-220 | TO-220 | |||
| Packing Method | Tube; Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube | Tube; Tube | ||||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | 55 volts | 55 volts | |||||||
| PD | 68000 milliwatts | 56 milliwatts | 68000 milliwatts | 68000 milliwatts | 56000 milliwatts | 68000 milliwatts |
