Power Field-Effect Transistor
Power Field-Effect Transistor
N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-247AC
Manufacturer: Infineon Technologies
Win Source Part Number: 1046985-IRFP3006PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 8970pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 170A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 195A TO247AC Product overview: IRFP3006PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP3006PBF can be used for catalog matching and distributor lookup.
MOSFET MOSFET N-CH 60V 257A TO247
MOSFET Transistor, N Channel, 195 A, 60 V, 0.0021 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 60V 195A TO247AC
| Rochester Electronics | DigiKey | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFP3006PBF | IRFP3006PBF-ND | 2605869 | 1046985-IRFP3006PBF | 278-IRFP3006PBF | IRFP3006PBF | 31Y2066 | IRFP3006PBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3006PBF | 60V 195A MOSFET Transistor | MOSFET | Mosfet Transistor, N Channel, 195 A, 60 V, 0.0021 Ohm, 10 V, 4 V Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | TO247 | TO-247; TO-247-3 | TO-247; TO-247 | TO-247; SOT3; TO-247AC | Tube | TO-3 | TO-247; TO-247-3 | |
| Packing Method | Tube; Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube | ||||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts |
