Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3006PBF IRFP3006PBF

Description
Power Field-Effect Transistor
Request a Quote Datasheet
Description
Power Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - IRFP3006PBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
 - IRFP3006PBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3006PBF - 1046985-IRFP3006PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3006PBF
1046985-IRFP3006PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3006PBF 1046985-IRFP3006PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046985-IRFP3006PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 195A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 8970pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 170A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046985-IRFP3006PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 8970pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 170A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFP3006PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFP3006PBF-ND
Single FETs, MOSFETs IRFP3006PBF-ND
N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-247AC

N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-247AC

Buy Now Datasheet
MOSFETs - 2605869 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605869
MOSFETs 2605869
Infineon MOSFET

Infineon MOSFET

Supplier's Site
MOSFETs - 2605868 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605868
MOSFETs 2605868
Infineon MOSFET

Infineon MOSFET

Supplier's Site
MOSFETs - 2605869P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605869P
MOSFETs 2605869P
Infineon MOSFET

Infineon MOSFET

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP3006PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP3006PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP3006PBF
MOSFET N-CH 60V 195A TO247AC

MOSFET N-CH 60V 195A TO247AC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET N-CH 60V 257A TO247

MOSFET MOSFET N-CH 60V 257A TO247

Buy Now Datasheet
Mosfet Transistor, N Channel, 195 A, 60 V, 0.0021 Ohm, 10 V, 4 V Rohs Compliant Infineon - 31Y2066 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 195 A, 60 V, 0.0021 Ohm, 10 V, 4 V Rohs Compliant Infineon
31Y2066
Mosfet Transistor, N Channel, 195 A, 60 V, 0.0021 Ohm, 10 V, 4 V Rohs Compliant Infineon 31Y2066
MOSFET Transistor, N Channel, 195 A, 60 V, 0.0021 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 195 A, 60 V, 0.0021 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFP3006PBF 1046985-IRFP3006PBF IRFP3006PBF-ND 2605869 IRFP3006PBF IRFP3006PBF 31Y2066
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3006PBF Single FETs, MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet Transistor, N Channel, 195 A, 60 V, 0.0021 Ohm, 10 V, 4 V Rohs Compliant Infineon
Package Type TO247 TO-247; SOT3; TO-247AC TO-247; TO-247-3 TO-247; TO-247 TO-247; TO-247-3 TO-3
Packing Method Tube; Tube Rail; Tube; Tube/Rail Tube; Tube
Polarity N-Channel; N-Channel N-Channel N-Channel
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