onsemi NTMFD4C820NT1G

NTMFD4C820NT1G is a dual N-channel power MOSFET in a DFN8 (SO8FL) package, 5.0 mm × 6.0 mm, designed for high-efficiency DC-DC converters and point-of-load applications. It integrates a high-side FET rated at 30 V, 18 A continuous drain current, and a low-side FET rated at 30 V, 27 A continuous drain current, with on-resistances of 7.3 mΩ and 3.4 mΩ at 10 V gate drive respectively. The device is Pb-free, halogen-free, and RoHS compliant. Thermal resistance is 66.5 °C/W and 63.3 °C/W for high-side and low-side FETs respectively when mounted on a 1 sq-in FR4 pad with 2 oz copper. Junction and storage temperature ranges from -55 °C to +150 °C. It meets AEC-Q200 automotive qualification standards.