The IRFHS9301TRPBF is a P-Channel MOSFET designed for various applications, including charge and discharge switching for battery applications and system/load switching. It features a maximum drain-to-source voltage (VDS) of -30V and a maximum gate-to-source voltage (VGS) of ±20V. The device has a low on-resistance (RDS(on)) of 37 mΩ at a gate voltage of -10V, which helps reduce conduction losses. With a continuous drain current rating of -8.5A at a case temperature of 25°C, it is suitable for applications requiring efficient power management. The typical total gate charge is 13 nC, making it compatible with existing surface mount techniques for easier manufacturing. The device is RoHS compliant, ensuring it contains no lead, bromide, or halogen, which contributes to its environmentally friendly profile. The IRFHS9301TRPBF is packaged in a compact 2mm x 2mm PQFN format, allowing for increased power density in designs. It is rated for industrial applications with a moisture sensitivity level of MSL1, indicating its reliability in various operating conditions.
MOSFET P-CH 30V 6A/13A 6PQFN Product overview: IRFHS9301TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHS9301TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 205364-IRFHS9301TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.1W (Ta)
Family Name: IRFHS9301
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-PQFN (2x2)
Dimension: 6-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A (Ta), 13A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 25μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 580pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 37 mOhm @ 7.8A, 10V
Alternative Parts (Cross-Reference): IRFHS9301TR2PBF;
Introduction Date: November 18, 2010
ECCN: EAR99
Country of Origin: China , Thailand
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
P-Channel 30V 6A (Ta), 13A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)
P-Channel 30V 6A (Ta), 13A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)
P-Channel 30V 6A (Ta), 13A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)
IRFHS9301 - 30V Single P-Channel HEXFET Power MOSFET
MOSFET P-CH 30V 6A/13A 6PQFN
MOSFET, P-CH, -30V, -13A, PQFN-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power RoHS Compliant: Yes
MOSFET P-CH 30V 6A/13A 6PQFN
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFHS9301TRPBF | 205364-IRFHS9301TRPBF | IRFHS9301TRPBFCT-ND | IRFHS9301TRPBF | IRFHS9301TRPBF | 91Y4686 | IRFHS9301TRPBF |
| Product Name | 30V 6A 13A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHS9301TRPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -13A, Pqfn-8; Transistor Polarity Infineon | Single FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 2.1 milliwatts | 2100 milliwatts | 2100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
