MOSFET N-CH 30V 22A/79A 8PQFN Product overview: IRFH5304TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 22A, 79A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 22A, 79A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5304TRPBF can be used for catalog matching and distributor lookup.
N-Channel Power MOSFET
N-Channel 30V 22A (Ta), 79A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: Infineon Technologies
Win Source Part Number: 205359-IRFH5304TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 22A (Ta), 79A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 50μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 2360pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 47A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
MOSFET, N-CH, 30V, 79A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation RoHS Compliant: Yes
TDSON-8 MOSFETs ROHS
MOSFET N-CH 30V 22A/79A 8PQFN
MOSFET 30V 1 N-CH HEXFET 4.5mOhms 16nC
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFH5304TRPBF | IRFH5304TRPBF | IRFH5304TRPBFTR-ND | 205359-IRFH5304TRPBF | 13AC9108 | IRFH5304TRPBF | IRFH5304TRPBF | IRFH5304TRPBF |
| Product Name | 30V 22A 79A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5304TRPBF | Mosfet, N-Ch, 30V, 79A, Pqfn; Transistor Polarity Infineon | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 3.6 milliwatts | 3600 to 46000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
