Power Field-Effect Transistor Product overview: IRL6283MTRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL6283MTRPBF can be used for catalog matching and distributor lookup.
N-Channel 20V 38A (Ta), 211A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount DIRECTFET™ MD
Power Field-Effect Transistor
Power Field-Effect Transistor
MOSFET, N CHANNEL, 20V, 211A, DIRECTFET MD-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:211A; On Resistance Rds(on):500µohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:63W RoHS Compliant: Yes
MOSFET N-CH 20V 38A DIRECTFET
MOSFET N-CH 20V 211A DIRECTFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRL6283MTRPBF | IRL6283MTRPBFTR-ND | IRL6283MTRPBF | 45X9520 | IRL6283MTRPBF | 376-IRL6283MTRPBF |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N Channel, 20V, 211A, Directfet Md-8; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 20V 211A DIRECTFET | |
| PD | 2100 milliwatts | 63000 milliwatts | 2100 milliwatts | |||
| TJ | -40 C (-40 F) | -40 to 150 C (-40 to 302 F) | ||||
| Polarity | N-Channel | N-Channel | ||||
| Package Type | DirectFET™ Isometric MD | DirectFET | TO-3 | DirectFETTM Isometric MD |
