Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR214BTFFP001 IRFR214BTFFP001

IRFR214B is a 250V N-channel MOSFET in a D-PAK (TO-252) package, designed for high-efficiency switching applications such as DC/DC converters and switch-mode power supplies. It has a continuous drain current of 2.2A at 25°C, an on-resistance of up to 2.0Ω at VGS=10V, a typical gate charge of 8.1nC, and a reverse transfer capacitance of 7.5pF. The device is 100% avalanche tested, with a single-pulsed avalanche energy rating of 45mJ and a peak diode recovery dv/dt of 5.5V/ns. Thermal resistance from junction to case is 5.08°C/W, and it operates from -55°C to +150°C. The part is surface-mounted and compatible with tape and reel packaging, with no change to core specs in variants marked by trailing ordering codes like TF_FP001.