MOSFET N-CH 30V 16A/42A 8PQFN Product overview: IRFH3702TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH3702TRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 16A/42A 8PQFN
IRFH3702 - 12V-300V N-Channel Power MOSFET
N-Channel 30V 16A (Ta), 42A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)
N-Channel 30V 16A (Ta), 42A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)
N-Channel 30V 16A (Ta), 42A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)
Manufacturer: Infineon Technologies
Win Source Part Number: 092028-IRFH3702TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (3x3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 1510pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.1 mOhm @ 16A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
MOSFET Transistor, N Channel, 16 A, 30 V, 0.0057 ohm, 10 V, 1.8 V RoHS Compliant: Yes
MOSFET N-CH 30V 16A/42A 8PQFN
MOSFET 30V 1 N-CH HEXFET 7.1mOhms 9.6nC
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Rochester Electronics | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFH3702TRPBF | IRFH3702TRPBF | IRFH3702TRPBF | IRFH3702TRPBFDKR-ND | 092028-IRFH3702TRPBF | 24R6382 | IRFH3702TRPBF | IRFH3702TRPBF |
| Product Name | 30V 16A 42A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH3702TRPBF | Mosfet Transistor, N Channel, 16 A, 30 V, 0.0057 Ohm, 10 V, 1.8 V Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| PD | 2.8 milliwatts | 2800 milliwatts | 2800 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
