N-channel silicon power MOSFET with a 100 V drain-source voltage rating, a maximum continuous drain current of 1.6 A at 25°C, and a typical on-resistance of 178 mΩ at 10 V gate-source voltage. It is packaged in a Micro3 (SOT-23) case, compliant with JEDEC TO-236AB outline. The device supports logic-level gate drive at 4.5 V and 10 V, has a gate threshold voltage range of 1.0 to 2.5 V, and a total gate charge of 2.5 nC. It is RoHS compliant, halogen-free, MSL1 moisture sensitivity rated, and qualifies under AEC-Q200 for industrial applications.
100V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
Benefits
Applications
Designers who used this product also designed with
1
2
HEXFET Power MOSFET
MOSFET N-CH 100V 1.6A SOT23
| Infineon Technologies AG | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | RF Transistors |
| Product Number | IRLML0100TRPBF-1 | IRLML0100TRPBF-1 | IRLML0100TRPBF-1 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRLML0100TRPBF-1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 0.2200 ohms |
