MOSFET N-CH 200V 62A D2PAK Product overview: IRFS4227TRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 62A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 62A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFS4227TRLPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017711-IRFS4227TRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Family Name: IRFS4227
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 62A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 4600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 26 mOhm @ 46A, 10V
Alternative Parts (Cross-Reference): FDB2614; IXTA86N20T-TRL; IXTA86N20T; STB80N20M5;
Introduction Date: September 27, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
N-Channel 200V 62A (Tc) 330W (Tc) Surface Mount D2PAK
N-Channel 200V 62A (Tc) 330W (Tc) Surface Mount D2PAK
N-Channel 200V 62A (Tc) 330W (Tc) Surface Mount D2PAK
IRFS4227 - 12V-300V N-CHANNEL PO
MOSFET N-CH 200V 62A D2PAK
IRFS4227 - 12V-300V N-Channel Power MOSFET
MOSFET N-CH 200V 62A D2PAK
MOSFET, N-CH, 200V, 62A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET MOSFT 200V 62A 26mOhm 70nC Qg
POWER FIELD-EFFECT TRANSISTOR, 62A I(D), 200V, 0.026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, LEAD FREE, D2PAK-3. FREE 2 YEAR RADWELL WARRANTY
200V 62A 330W 26mΩ@10V,46A 5V@250uA N Channel TO-263-2 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Rochester Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFS4227TRLPBF | 017711-IRFS4227TRLPBF | IRFS4227TRLPBFCT-ND | IRFS4227TRLPBF | IRFS4227TRLPBF | 2579431 | IRFS4227TRLPBF | 13AC9157 | IRFS4227TRLPBF | 105246609 | IRFS4227TRLPBF |
| Product Name | 200V 62A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4227TRLPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 62A, To-263Ab; Transistor Polarity Infineon | MOSFET | Transistor | Triode/MOS Tube/Transistor >> MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | |||||||
| Transconductance | 0.0490 kS | ||||||||||
| PD | 330 milliwatts | 330000 milliwatts | 330000 milliwatts | 330000 milliwatts |
