12V-300V N-Channel Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 140553-IRFR1010ZPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 2840pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 42A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
N-Channel 55V 42A (Tc) 140W (Tc) Surface Mount D-Pak
MOSFET N-CH 55V 42A DPAK Product overview: IRFR1010ZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 42A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 42A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR1010ZPBF can be used for catalog matching and distributor lookup.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 42A;D-Pak (TO-252AA);-55deg
MOSFET N-CH 55V 42A DPAK
DISCONTINUED BY MANUFACTURER, (PRICE/EA) N CHANNEL MOSFET, 55V, 42A, D-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:42A; DRAIN SOURCE VOLTAGE VDS:55V; ON RESISTA. FREE 2 YEAR RADWELL WARRANTY
| Rochester Electronics | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | IRFR1010ZPBF | 140553-IRFR1010ZPBF | IRFR1010ZPBF-ND | 278-IRFR1010ZPBF | 70017236 | IRFR1010ZPBF | 66790207 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR1010ZPBF | Single FETs, MOSFETs | 55V 42A DPAK MOSFET Transistor | MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 42A;D-Pak (TO-252AA);-55deg | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | DPAK | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Packing Method | Tube; Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube | |||
| V(BR)DSS | 55 volts | 55 volts |
