onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IRFW610BTMFP001

3.3A, 200V, 1.5ohm, N-Channel Power MOSFET

Win Source Part Number: 981909-IRFW610BTMFP0 01 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.13W (Ta), 38W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: 2156-IRFW610BTMFP001 ,FAIFSCIRFW610BTMFP0 01 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: Not applicable