onsemi Single FETs, MOSFETs NTMFS4C59NT1G

N-Channel 30V 9A (Ta), 52A (Tc) 760mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 30V 9A (Ta), 52A (Tc) 760mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 30V 9A (Ta), 52A (Tc) 760mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)

MOSFET N-CH 30V 52A SO8FL Product overview: NTMFS4C59NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 52A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 52A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMFS4C59NT1G can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor

Manufacturer: ON Semiconductor
Win Source Part Number: 790858-NTMFS4C59NT1G
Packaging: Reel package
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 5-DFN (5x6) (8-SOFL)
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 22.2nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1252pF @ 15V
Vgs (Maximum): ±20V
Rds On (Maximum) @ Id, Vgs: 5.8 mOhm @ 30A, 10V
Introduction Date: January 01, 2000
Country of Origin: Malaysia
Estimated EOL Date: Not Applicable
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited