Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5010TRPBF IRFH5010TRPBF

Description
N-Channel Power MOSFET
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Description
N-Channel Power MOSFET
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Company
Product
Description
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 - IRFH5010TRPBF - Rochester Electronics
Newburyport, MA, United States
N-Channel Power MOSFET

N-Channel Power MOSFET

Supplier's Site Datasheet
 - IRFH5010TRPBF - Rochester Electronics
Newburyport, MA, United States
N-Channel Power MOSFET

N-Channel Power MOSFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5010TRPBF - 1046868-IRFH5010TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5010TRPBF
1046868-IRFH5010TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5010TRPBF 1046868-IRFH5010TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046868-IRFH5010TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.6W (Ta), 250W (Tc) Family Name: IRFH5010 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (5x6) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 4340pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): SiR876DP; TSM120N10PQ56 RLG; SiR876DP-T1-GE3 ; RS1P600BETB1; Introduction Date: March 29, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046868-IRFH5010TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Family Name: IRFH5010
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 4340pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): SiR876DP; TSM120N10PQ56 RLG; SiR876DP-T1-GE3 ; RS1P600BETB1;
Introduction Date: March 29, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFH5010TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFH5010TRPBF
Single FETs, MOSFETs IRFH5010TRPBF
MOSFET N-CH 100V 13A/100A 8PQFN

MOSFET N-CH 100V 13A/100A 8PQFN

Supplier's Site Datasheet
Singapore
100V 13A 100A MOSFET Transistor
278-IRFH5010TRPBF
100V 13A 100A MOSFET Transistor 278-IRFH5010TRPBF
MOSFET N-CH 100V 13A/100A 8PQFN Product overview: IRFH5010TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5010TRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 13A/100A 8PQFN Product overview: IRFH5010TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5010TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFH5010TRPBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH5010TRPBFDKR-ND
Single FETs, MOSFETs IRFH5010TRPBFDKR-ND
N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - IRFH5010TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH5010TRPBFTR-ND
Single FETs, MOSFETs IRFH5010TRPBFTR-ND
N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - IRFH5010TRPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH5010TRPBFCT-ND
Single FETs, MOSFETs IRFH5010TRPBFCT-ND
N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC

MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH5010TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH5010TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH5010TRPBF
MOSFET N-CH 100V 13A/100A 8PQFN

MOSFET N-CH 100V 13A/100A 8PQFN

Supplier's Site
Mosfet Transistor; Channel Type Infineon - 74R1478 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor; Channel Type Infineon
74R1478
Mosfet Transistor; Channel Type Infineon 74R1478
MOSFET Transistor; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:3.6W RoHS Compliant: Yes

MOSFET Transistor; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:3.6W RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor, Full Reel; Channel Type Infineon - 74R1479 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, Full Reel; Channel Type Infineon
74R1479
Mosfet Transistor, Full Reel; Channel Type Infineon 74R1479
MOSFET Transistor, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Product Range:-RoHS Compliant: Yes

MOSFET Transistor, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Product Range:-RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFH5010TRPBF 1046868-IRFH5010TRPBF IRFH5010TRPBF 278-IRFH5010TRPBF IRFH5010TRPBFDKR-ND IRFH5010TRPBF IRFH5010TRPBF 74R1478 74R1479
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5010TRPBF Single FETs, MOSFETs 100V 13A 100A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor; Channel Type Infineon Mosfet Transistor, Full Reel; Channel Type Infineon
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TDSON8 SOT3; PQFN (5x6) 8-PowerVDFN Tape & Reel (TR) 8-PowerVDFN 4340 pF @ 25 V TO-3 TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
V(BR)DSS 100 volts 100 volts 100 volts
PD 3600 to 250000 milliwatts 3600 milliwatts 250 milliwatts 3600 milliwatts
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