MOSFET N-CH 650V 20A D2PAK-3
NTB190N65S3HF - Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 20 A, D2PAK
Manufacturer: onsemi
Win Source Part Number: 1324448-NTB190N65S3H
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 800
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 162W (Tc)
Supplier Device Package: D²PAK-3 (TO-263-3)
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 488-NTB190N65S3HFCT,
Base Product Number: NTB190
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
N-Channel 650V 20A (Tc) 162W (Tc) Surface Mount D²PAK-3 (TO-263-3)
MOSFET N-CH 650V 20A D2PAK-3
MOSFET N-CH 650V 20A D2PAK-3
Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 20 A, 190 mΩ, D2PAK, 800-REEL Product overview: NTB190N65S3HF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 20 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 20 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB190N65S3HF can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 20A, 650V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.161ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes
MOSFET SUPERFET3 650V FRFET 190M
MOSFET N-CH 650V 20A D2PAK-3
POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 650V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | Rochester Electronics | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | NTB190N65S3HF | NTB190N65S3HF | 1324448-NTB190N65S3HF | 488-NTB190N65S3HFTR-ND | 278-NTB190N65S3HF | 99AC9406 | NTB190N65S3HF | NTB190N65S3HF | 135810120 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 650 V 20 A MOSFET Transistor | Mosfet, N-Ch, 20A, 650V, To-263; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 650 volts | ||||||||
| IDSS | 20000 milliamps | 20000 milliamps | |||||||
| PD | 162000 milliwatts | 162000 milliwatts |
