Power MOSFET for switching applications, in a DPAK-3 straight lead package, with a 24 V drain-to-source voltage rating and 85 A continuous drain current at TC = 25°C. Features a maximum on-resistance of 5.17 mΩ at VGS = 10 V and a gate charge of 17.7 nC. Thermal resistance junction-to-case is 1.6 °C/W, with a maximum operating temperature of 150 °C. Surge avalanche energy rating is 90 mJ at TJ = 25 °C. Complies with RoHS and is Pb-free. All variants in this series meet AEC-Q200 qualification standards.
Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | NTD4404N1G |
| Polarity | N-Channel |
