Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF1300R2 MMDF1300R2

The MMDF1300R2 is a complementary dual N- and P-channel MOSFET in a SO-8 surface mount package, designed for low-voltage, high-speed switching in battery-powered and portable electronics. It features a maximum drain-source voltage of 25 Vdc, continuous drain currents of 3.0 A for the N-channel and 2.0 A for the P-channel, and a power dissipation of 1.8 W at 25°C ambient. The device has ultra-low RDS(on) of 100 mΩ (N-channel) and 210 mΩ (P-channel) at 10 V gate drive, with logic-level gate drive compatibility. It meets AEC-Q200 automotive qualification standards and is RoHS compliant. Thermal resistance is 66.3 °C/W, and the operational temperature range is -65°C to +150°C. The package measures 4.80-5.00 mm in length and 3.80-4.00 mm in width. It is shipped in 2500-piece tape and reel packaging.