Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Manufacturer: Renesas Electronics America
Win Source Part Number: 1083322-NP34N055SLE-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.2W (Ta), 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252 (MP-3ZK)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 34A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 72nC @ 5V
Max Input Capacitance: 3000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
NP34N055 - POWER FIELD-EFFECT TR
| Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NP34N055SLE-E1-AY | 1083322-NP34N055SLE-E1-AY | NP34N055SLE-E1-AY |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP34N055SLE-E1-AY | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-252 (DPAK); TO-252 | SOT3; TO-252 (DPAK); TO-252 (MP-3ZK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Reel - TR | Bulk; Bulk |
