Renesas Electronics Corporation MOSFET Transistor NP34N055SLE-E1-AY

Description
Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NP34N055SLE-E1-AY - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
MOSFET Transistor 278-NP34N055SLE-E1-AY
NP34N055 - POWER FIELD-EFFECT TR Product overview: NP34N055SLE-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP34N055SLE-E1-A Y can be used for catalog matching and distributor lookup.

NP34N055 - POWER FIELD-EFFECT TR Product overview: NP34N055SLE-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP34N055SLE-E1-AY can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP34N055SLE-E1-AY - 1083322-NP34N055SLE-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP34N055SLE-E1-AY
1083322-NP34N055SLE-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP34N055SLE-E1-AY 1083322-NP34N055SLE-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1083322-NP34N055SLE- E1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.2W (Ta), 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 (MP-3ZK) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 34A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 72nC @ 5V Max Input Capacitance: 3000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083322-NP34N055SLE-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.2W (Ta), 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252 (MP-3ZK)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 34A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 72nC @ 5V
Max Input Capacitance: 3000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP34N055SLE-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP34N055SLE-E1-AY
NP34N055 - POWER FIELD-EFFECT TR

NP34N055 - POWER FIELD-EFFECT TR

Supplier's Site

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NP34N055SLE-E1-AY 278-NP34N055SLE-E1-AY 1083322-NP34N055SLE-E1-AY NP34N055SLE-E1-AY
Product Name MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP34N055SLE-E1-AY Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252 Tape & Reel (TR) SOT3; TO-252 (DPAK); TO-252 (MP-3ZK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Packing Method Tape Reel; Tape & Reel Tape & Reel (TR) Tape Reel; Reel - TR Bulk; Bulk
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