Infineon Technologies AG Single FETs, MOSFETs IRLS3036PBF

N-Channel 60V 195A (Tc) 380W (Tc) Surface Mount D2PAK

MOSFET N-CH 60V 195A D2PAK Product overview: IRLS3036PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLS3036PBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1188653-IRLS3036PBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 380W
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 195A
Rds On (Maximum) at Id, Vgs: 2.4mOhm at 165A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 140nC at 4.5V
Gate Source Voltage (Maximum): ±16V
Input Capacitance (Ciss) (Maximum) at Vds: 11210pF at 50V

Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB