Manufacturer: Infineon Technologies
Win Source Part Number: 017628-IRFP260NPBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: IRFP260
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 234nC @ 10V
Max Input Capacitance: 4057pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 28A, 10V
Alternative Parts (Cross-Reference): IXFH60N20FSN; IXFH74N20PSN; APT20M36BLL;
Introduction Date: February 12, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
N-Channel 200V 50A (Tc) 300W (Tc) Through Hole TO-247AC
MOSFET N-CH 200V 50A TO247AC Product overview: IRFP260NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP260NPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 50A TO247AC
IRFP260 - 12V-300V N-Channel Power MOSFET
MOSFET N-CH 200V 50A TO247AC
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V
N CHANNEL MOSFET, 200V, 50A, TO-247AC; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 200V, 0.04OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 200V, 0.04OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
200V 50A 300W 40mΩ@10V,28A 4V@250uA N Channel TO-247AC-3 MOSFETs ROHS
MOSFET MOSFT 200V 49A 40mOhm 156nCAC
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Newark, An Avnet Company | Radwell International | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017628-IRFP260NPBF | IRFP260NPBF-ND | 278-IRFP260NPBF | IRFP260NPBF | 5429771 | IRFP260NPBF | IRFP260NPBF | 70017036 | 63J6864 | 66790099 | IRFP260NPBF | IRFP260NPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP260NPBF | Single FETs, MOSFETs | 200V 50A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V | N Channel Mosfet, 200V, 50A, To-247Ac; Channel Type Infineon | Transistor | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | 200 volts | |||||||
| PD | 300000 milliwatts | 300 milliwatts | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||||
| Package Type | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | Tube | TO-247; TO-247-3 | TO-247; To-247ac | TO247 | TO-247; TO-247-3 | TO-247 | TO-3; TO-247 | TO-247 |