onsemi Single Bipolar Transistors MJE702G

Description
Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-126
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-126
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - MJE702GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE702GOS-ND
Single Bipolar Transistors MJE702GOS-ND
Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-126

Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-126

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJE702G - 1223745-MJE702G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE702G
1223745-MJE702G
TRANSISTORS - Transistors (BJT) - Single - MJE702G 1223745-MJE702G
Manufacturer: ON Semiconductor Win Source Part Number: 1223745-MJE702G Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 40W Transistor Type: PNP - Darlington Family Name: MJE702 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-225AA Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Maximum): 100μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V Alternative Parts (Cross-Reference): 2N6036-BP; MJE703; MJE702; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1223745-MJE702G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 40W
Transistor Type: PNP - Darlington
Family Name: MJE702
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-225AA
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Maximum): 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V
Alternative Parts (Cross-Reference): 2N6036-BP; MJE703; MJE702;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
 - MJE702G - Rochester Electronics
Newburyport, MA, United States
4.0 A, 80 V PNP Darlington Bipolar Power Transistor

4.0 A, 80 V PNP Darlington Bipolar Power Transistor

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
MJE702G
Darlington Transistors MJE702G
Darlington Transistors 4A 80V Bipolar Power PNP

Darlington Transistors 4A 80V Bipolar Power PNP

Buy Now Datasheet
Darlington Transistor, Pnp, -80V, To-225; Transistor Polarity Onsemi - 42K1300 - Newark, An Avnet Company
Chicago, IL, United States
Darlington Transistor, Pnp, -80V, To-225; Transistor Polarity Onsemi
42K1300
Darlington Transistor, Pnp, -80V, To-225; Transistor Polarity Onsemi 42K1300
DARLINGTON TRANSISTOR, PNP, -80V, TO-225; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-RoHS Compliant: Yes

DARLINGTON TRANSISTOR, PNP, -80V, TO-225; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE702G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE702G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE702G
TRANS PNP DARL 80V 4A TO126

TRANS PNP DARL 80V 4A TO126

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Power MOSFET Darlington Transistors Darlington Transistors Bipolar RF Transistors
Product Number MJE702GOS-ND 1223745-MJE702G MJE702G MJE702G 42K1300 MJE702G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJE702G Darlington Transistors Darlington Transistor, Pnp, -80V, To-225; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP
Package Type TO-225AA, TO-126-3 SOT3 TO-225 TO-3
Packing Method Bulk; Bulk Bulk; Bulk Bulk; Bulk
TJ -55 to 150 C (-67 to 302 F)
Power Gain 750 dB
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