Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Manufacturer: Infineon Technologies
Win Source Part Number: 1046810-IRFB3256PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 195nC @ 10V
Max Input Capacitance: 6600pF @ 48V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.4 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
N-Channel 60V 75A (Tc) 300W (Tc) Through Hole TO-220AB
International Rectifier IRFB3256PBF, MOSFET Product overview: IRFB3256PBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3256PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 75A TO220AB
MOSFET MOSFET, 60V, 210A, 3 130 nC Qg, TO-220AB
MOSFET N CH 60V 75A TO-220AB
MOSFET, N-CH, 60V, 75A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| Rochester Electronics | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB3256PBF | 1046810-IRFB3256PBF | IRFB3256PBF-ND | 278-IRFB3256PBF | IRFB3256PBF | IRFB3256PBF | 376-IRFB3256PBF | 34AC1741 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3256PBF | Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N CH 60V 75A TO-220AB | Mosfet, N-Ch, 60V, 75A, To-220Ab; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | 195 nC @ 10 V | TO-3; TO-220 | |||
| Packing Method | Tube; Tube | Rail; Tube; Tube/Rail | Tube; Tube | Tube; Tube | ||||
| V(BR)DSS | 60 volts | 60 volts |
