onsemi ISL9N312AD3STNL

The ISL9N312AD3ST is an N-channel logic level PWM optimized UltraFET® trench MOSFET in a TO-252AA package, designed for DC/DC converter applications. It has a drain-to-source voltage rating of 30 V, a continuous drain current of 50 A at 25°C with VGS = 10 V, and a typical on-resistance of 0.010 Ω at VGS = 10 V and 0.017 Ω at VGS = 4.5 V. The device features a total gate charge of 13 nC at VGS = 5 V and thermal resistance junction-to-case of 2 °C/W. The TO-252AA package is rated for operating and storage temperatures from -55 °C to 175 °C.