Manufacturer: Infineon Technologies
Win Source Part Number: 1046987-IRFP3306PBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 220W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 4520pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
N-Channel 60V 120A (Tc) 220W (Tc) Through Hole TO-247AC
MOSFET N-CH 60V 120A TO247AC Product overview: IRFP3306PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP3306PBF can be used for catalog matching and distributor lookup.
IRFP3306 - 12V-300V N-Channel Power MOSFET
MOSFET N-Channel 60V 160A HEXFET TO247AC
MOSFET N-Channel 60V 160A HEXFET TO247AC
MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg
N CHANNEL MOSFET, 60V, 160A, TO-247AC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:160A; On Resistance Rds(on):0.0033ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:20V RoHS Compliant: Yes
MOSFET N-CH 60V 120A TO247AC
MOSFET N-CH 60V 120A TO247AC
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1046987-IRFP3306PBF | IRFP3306PBF-ND | 278-IRFP3306PBF | IRFP3306PBF | 6886982 | IRFP3306PBF | 08N6351 | IRFP3306PBF | IRFP3306PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3306PBF | Single FETs, MOSFETs | 60V 120A MOSFET Transistor | MOSFETs | MOSFET | N Channel Mosfet, 60V, 160A, To-247Ac; Transistor Polarity Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| PD | 220000 milliwatts | 220 milliwatts | 220000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | Tube | TO247 | TO-247; To-247ac | TO-3; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 |
