Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9024NPBF IRFU9024NPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 001977-IRFU9024NPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 38W (Tc) Family Name: IRFU9024N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 175 mOhm @ 6.6A, 10V Alternative Parts (Cross-Reference): FQU11P06; FQU11P06TU_NL; FQU11P06TU; Introduction Date: February 18, 2004 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 001977-IRFU9024NPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 38W (Tc) Family Name: IRFU9024N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 175 mOhm @ 6.6A, 10V Alternative Parts (Cross-Reference): FQU11P06; FQU11P06TU_NL; FQU11P06TU; Introduction Date: February 18, 2004 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9024NPBF - 001977-IRFU9024NPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9024NPBF
001977-IRFU9024NPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9024NPBF 001977-IRFU9024NPBF
Manufacturer: Infineon Technologies Win Source Part Number: 001977-IRFU9024NPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 38W (Tc) Family Name: IRFU9024N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 175 mOhm @ 6.6A, 10V Alternative Parts (Cross-Reference): FQU11P06; FQU11P06TU_NL; FQU11P06TU; Introduction Date: February 18, 2004 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 001977-IRFU9024NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 38W (Tc)
Family Name: IRFU9024N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 175 mOhm @ 6.6A, 10V
Alternative Parts (Cross-Reference): FQU11P06; FQU11P06TU_NL; FQU11P06TU;
Introduction Date: February 18, 2004
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFETs - 5411657 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5411657
MOSFETs 5411657
MOSFET P-Channel 55V 11A IPAK

MOSFET P-Channel 55V 11A IPAK

Supplier's Site
MOSFETs - 9194911 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9194911
MOSFETs 9194911
MOSFET P-Channel 55V 11A IPAK

MOSFET P-Channel 55V 11A IPAK

Supplier's Site
 - IRFU9024NPBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Supplier's Site Datasheet
 - IRFU9024NPBF - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFU9024NPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU9024NPBF-ND
Single FETs, MOSFETs IRFU9024NPBF-ND
P-Channel 55V 11A (Tc) 38W (Tc) Through Hole IPAK (TO-251AA)

P-Channel 55V 11A (Tc) 38W (Tc) Through Hole IPAK (TO-251AA)

Buy Now Datasheet
Singapore, Singapore
55V 11A MOSFET Transistor
278-IRFU9024NPBF
55V 11A MOSFET Transistor 278-IRFU9024NPBF
MOSFET P-CH 55V 11A IPAK Product overview: IRFU9024NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU9024NPBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 55V 11A IPAK Product overview: IRFU9024NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU9024NPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
P Channel Mosfet, -55V, 11A, Ipak; Channel Type Infineon - 63J7099 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -55V, 11A, Ipak; Channel Type Infineon
63J7099
P Channel Mosfet, -55V, 11A, Ipak; Channel Type Infineon 63J7099
P CHANNEL MOSFET, -55V, 11A, IPAK; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, -55V, 11A, IPAK; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU9024NPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU9024NPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU9024NPBF
MOSFET P-CH 55V 11A IPAK

MOSFET P-CH 55V 11A IPAK

Supplier's Site
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;I-Pak (TO-251AA);PD 38W - 70017048 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;I-Pak (TO-251AA);PD 38W
70017048
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;I-Pak (TO-251AA);PD 38W 70017048
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;I-Pak (TO-251AA);PD 38W

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;I-Pak (TO-251AA);PD 38W

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC

MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC

Buy Now Datasheet
Single FETs, MOSFETs - IRFU9024NPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFU9024NPBF
Single FETs, MOSFETs IRFU9024NPBF
MOSFET P-CH 55V 11A IPAK

MOSFET P-CH 55V 11A IPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFU9024NPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFU9024NPBF
Single FETs, MOSFETs IRFU9024NPBF
IRFU9024N - 55V SINGLE P-CHANNEL

IRFU9024N - 55V SINGLE P-CHANNEL

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001977-IRFU9024NPBF 5411657 IRFU9024NPBF IRFU9024NPBF-ND 278-IRFU9024NPBF 63J7099 IRFU9024NPBF 70017048 IRFU9024NPBF IRFU9024NPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9024NPBF MOSFETs Single FETs, MOSFETs 55V 11A MOSFET Transistor P Channel Mosfet, -55V, 11A, Ipak; Channel Type Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;I-Pak (TO-251AA);PD 38W MOSFET Single FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 55 volts 55 volts -55 volts 55 volts
PD 38000 milliwatts 38 milliwatts 38000 milliwatts 38000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; IPAK (TO-251) Ipak (to-251) IPAK TO-251-3 Short Leads, IPAK, TO-251AA Tube TO-3 TO-251-3 Short Leads, IPak, TO-251AA I-Pak (TO-251AA) TO-251-3 Short Leads, IPak, TO-251AA
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