MOSFET P-CH 60V 1.9A SOT223-4 Product overview: ISP25DP06NMXTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISP25DP06NMXTSA1
Power Field-Effect Transistor
Win Source Part Number: 961051-ISP25DP06NMXT
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP004987272
Base Product Number: ISP25DP06
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET P-CH 60V 1.9A SOT223-4
P-Channel 60V 1.9A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
MOSFET P-CH 60V 1.9A SOT223-4
MOSFET P-CH 60V 1.9A SOT223-4
MOSFET, P-CH, -60V, -1.9A, 150DEG C ROHS COMPLIANT: YES
MOSFET P-CH 60V 1.9A SOT223-4
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Rochester Electronics | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-ISP25DP06NMXTSA1 | 2439275 | ISP25DP06NMXTSA1 | 961051-ISP25DP06NMXTSA1 | 448-ISP25DP06NMXTSA1DKR-ND | ISP25DP06NMXTSA1 | 42AH1864 | ISP25DP06NMXTSA1 | ISP25DP06NMXTSA1 |
| Product Name | 60V 1.9A MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -60V, -1.9A, 150Deg C Rohs Compliant Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 60 volts | 60 volts | |||||||
| Transconductance | 0.0031 kS | ||||||||
| PD | 4.2 milliwatts | 1800 to 4200 milliwatts | 1800 milliwatts |
