N-Channel 250V 19A (Tc) 46W (Tc) Through Hole TO-220AB
MOSFET N-CH 250V 19A TO220AB Product overview: IRFI4229PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI4229PBF can be used for catalog matching and distributor lookup.
IRFI4229 - 12V-300V N-Channel Power MOSFET
IRFI4229 - 12V-300V N-Channel Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 090824-IRFI4229PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4480pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 46 mOhm @ 11A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 250V, 19A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET N-CH 250V 19A TO220AB
MOSFET MOSFT 250V 19A 46mOhm 73nC
MOSFET, N-CH, 250V, 19A, TO-220FP, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:19A, DRAIN SOURCE VOLTAGE VDS:250V, ON RESISTANCE RDS(ON):0.038OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:5V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFI4229PBF-ND | 278-IRFI4229PBF | IRFI4229PBF | 090824-IRFI4229PBF | 34AC1746 | IRFI4229PBF | IRFI4229PBF | 108056487 |
| Product Name | Single FETs, MOSFETs | 250V 19A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI4229PBF | Mosfet, N-Ch, 250V, 19A, To-220Fp; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 | Tube | FULLPAK220 | TO-220; SOT3; TO-220AB | TO-3; TO-220 | TO-220; TO-220-3 | ||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 250 volts | 250 volts | ||||||
| Transconductance | 0.0260 kS |
