Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4110GPBF IRFB4110GPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 083556-IRFB4110GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 9620pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 75A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 083556-IRFB4110GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 9620pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 75A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4110GPBF - 083556-IRFB4110GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4110GPBF
083556-IRFB4110GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4110GPBF 083556-IRFB4110GPBF
Manufacturer: Infineon Technologies Win Source Part Number: 083556-IRFB4110GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 9620pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 75A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 083556-IRFB4110GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 210nC @ 10V
Max Input Capacitance: 9620pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 75A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 8655807 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8655807
MOSFETs 8655807
MOSFET N-Ch 100V 180A HEXFET TO-220AB

MOSFET N-Ch 100V 180A HEXFET TO-220AB

Supplier's Site
MOSFETs - 8655807P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8655807P
MOSFETs 8655807P
MOSFET N-Ch 100V 180A HEXFET TO-220AB

MOSFET N-Ch 100V 180A HEXFET TO-220AB

Supplier's Site
MOSFETs - 1459698 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1459698
MOSFETs 1459698
MOSFET N-Ch 100V 180A HEXFET TO-220AB

MOSFET N-Ch 100V 180A HEXFET TO-220AB

Supplier's Site
 - IRFB4110GPBF - Rochester Electronics
Newburyport, MA, United States
12V-300V N-Channel Power MOSFET

12V-300V N-Channel Power MOSFET

Supplier's Site Datasheet
 - IRFB4110GPBF - Rochester Electronics
Newburyport, MA, United States
12V-300V N-Channel Power MOSFET

12V-300V N-Channel Power MOSFET

Supplier's Site Datasheet
Singapore
100V 120A MOSFET Transistor
278-IRFB4110GPBF
100V 120A MOSFET Transistor 278-IRFB4110GPBF
MOSFET N-CH 100V 120A TO220AB Product overview: IRFB4110GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4110GPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 120A TO220AB Product overview: IRFB4110GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4110GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB4110GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB4110GPBF-ND
Single FETs, MOSFETs IRFB4110GPBF-ND
N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB

N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFET N-CH 100V 120A TO220AB - 376-IRFB4110GPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 120A TO220AB
376-IRFB4110GPBF
MOSFET N-CH 100V 120A TO220AB 376-IRFB4110GPBF
MOSFET N-CH 100V 120A TO220AB

MOSFET N-CH 100V 120A TO220AB

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB4110GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB4110GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB4110GPBF
MOSFET N-CH 100V 120A TO220AB

MOSFET N-CH 100V 120A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 083556-IRFB4110GPBF 8655807 8655807P IRFB4110GPBF 278-IRFB4110GPBF IRFB4110GPBF-ND 376-IRFB4110GPBF IRFB4110GPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4110GPBF MOSFETs MOSFETs 100V 120A MOSFET Transistor Single FETs, MOSFETs MOSFET N-CH 100V 120A TO220AB Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 370000 milliwatts 370 milliwatts 370000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; To-220ab TO-220; TO-220AB TO-220; TO-220AB Tube TO-220; TO-220-3 TO-220; TO-220-3
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