Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4110GPBF IRFB4110GPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 083556-IRFB4110GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 210nC @ 10V
Max Input Capacitance: 9620pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 75A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

MOSFET N-Ch 100V 180A HEXFET TO-220AB

MOSFET N-Ch 100V 180A HEXFET TO-220AB

MOSFET N-Ch 100V 180A HEXFET TO-220AB

12V-300V N-Channel Power MOSFET

12V-300V N-Channel Power MOSFET

MOSFET N-CH 100V 120A TO220AB Product overview: IRFB4110GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4110GPBF can be used for catalog matching and distributor lookup.

N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB