onsemi TRANSISTORS - Transistors (BJT) - Single - MJD42C1G MJD42C1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1077392-MJD42C1G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I-Pak Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.5V @ 600mA, 6A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 15 @ 3A, 4V Maximum Power Dissipation: 1.75W Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Single - MJD42C1G - 1077392-MJD42C1G - Win Source Electronics
    Win Source Electronics
  • MJD42C1G - Rochester Electronics
    Rochester Electronics
  • Single Bipolar Transistors - MJD42C1GOS-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - MJD42C1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD42C1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Bipolar Transistor, Pnp, -100V, D-Pak-3; Transistor Polarity Onsemi - 71J5856 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor, Bipol, Pnp, -100V; Transistor Polarity Onsemi - 81Y6796 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1077392-MJD42C1G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I-Pak Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.5V @ 600mA, 6A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 15 @ 3A, 4V Maximum Power Dissipation: 1.75W Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJD42C1G - 1077392-MJD42C1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD42C1G
1077392-MJD42C1G
TRANSISTORS - Transistors (BJT) - Single - MJD42C1G 1077392-MJD42C1G
Manufacturer: ON Semiconductor Win Source Part Number: 1077392-MJD42C1G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I-Pak Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.5V @ 600mA, 6A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 15 @ 3A, 4V Maximum Power Dissipation: 1.75W Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1077392-MJD42C1G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: I-Pak
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.5V @ 600mA, 6A
Collector Cut-off Current(Max): 50μA
Typical Gain (hFE) (Min): 15 @ 3A, 4V
Maximum Power Dissipation: 1.75W
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- MJD42C1G - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
MJD42C1G
MJD42C1G
6.0 A, 100 V PNP Bipolar Power Transistor

6.0 A, 100 V PNP Bipolar Power Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - MJD42C1GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD42C1GOS-ND
Single Bipolar Transistors MJD42C1GOS-ND
Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Through Hole I-PAK

Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Through Hole I-PAK

Buy Now Datasheet
Single Bipolar Transistors - MJD42C1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD42C1G
Single Bipolar Transistors MJD42C1G
TRANS PNP 100V 6A IPAK

TRANS PNP 100V 6A IPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD42C1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD42C1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD42C1G
TRANS PNP 100V 6A IPAK

TRANS PNP 100V 6A IPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJD42C1G
Bipolar Transistors - BJT MJD42C1G
Bipolar Transistors - BJT 6A 100V 20W PNP

Bipolar Transistors - BJT 6A 100V 20W PNP

Buy Now Datasheet
Bipolar Transistor, Pnp, -100V, D-Pak-3; Transistor Polarity Onsemi - 71J5856 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Pnp, -100V, D-Pak-3; Transistor Polarity Onsemi
71J5856
Bipolar Transistor, Pnp, -100V, D-Pak-3; Transistor Polarity Onsemi 71J5856
BIPOLAR TRANSISTOR, PNP, -100V, D-PAK-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, PNP, -100V, D-PAK-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor, Bipol, Pnp, -100V; Transistor Polarity Onsemi - 81Y6796 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipol, Pnp, -100V; Transistor Polarity Onsemi
81Y6796
Transistor, Bipol, Pnp, -100V; Transistor Polarity Onsemi 81Y6796
TRANSISTOR, BIPOL, PNP, -100V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:20W; DC Collector Current:-6A; DC Current Gain hFE:15hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, BIPOL, PNP, -100V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:20W; DC Collector Current:-6A; DC Current Gain hFE:15hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Power MOSFET Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 1077392-MJD42C1G MJD42C1G MJD42C1GOS-ND MJD42C1G MJD42C1G MJD42C1G 71J5856 81Y6796
Product Name TRANSISTORS - Transistors (BJT) - Single - MJD42C1G Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT Bipolar Transistor, Pnp, -100V, D-Pak-3; Transistor Polarity Onsemi Transistor, Bipol, Pnp, -100V; Transistor Polarity Onsemi
Polarity PNP; PNP PNP PNP; PNP PNP PNP
Package Type SOT3; I-Pak DPAK INSERTION MOUNT TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-3 TO-3
Packing Method Tube; Tube Tube; Tube
IC(max) 6000 milliamps 6000 milliamps 6000 milliamps
VCEO 100 volts 100 volts 100 volts
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