MOSFET 2N-CH 150V 8.7A TO220-5 Product overview: IRFI4019H-117P from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 8.7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 8.7A, TO220, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRFI4019H-117P can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 8.7A I(D), 150V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Infineon Technologies
Win Source Part Number: 040718-IRFI4019H-117
Packaging: Tube/Rail
Mounting: Through Hole
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-5 Full-Pak
Maximum Power Dissipation: 18W
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 8.7A
Gate-Source Threshold Voltage: 4.9V @ 50μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 810pF @ 25V
Maximum Rds On at Id,Vgs: 95 mOhm @ 5.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
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MOSFET Transistor, N Channel, 8.7 A, 150 V, 80 mohm, 10 V, 4.9 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-IRFI4019H-117P | IRFI4019H-117P | 040718-IRFI4019H-117P | IRFI4019H-117P-ND | IRFI4019H-117P | IRFI4019H-117P | IRFI4019H-117P | 73R5002 |
| Product Name | 150V 8.7A TO220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI4019H-117P | FET, MOSFET Arrays | MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 8.7 A, 150 V, 80 Mohm, 10 V, 4.9 V Rohs Compliant Infineon | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 150 volts | 150 volts | 150 volts | |||||
| PD | 18000 milliwatts | 18000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | Tube | FULLPAK220 | TO-220; SOT3; TO-220-5 Full-Pak | TO-220; TO-220-5 Full Pack | TO-220; TO-220-5 Full Pack | TO-3 |
