onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MCH6337-TL-W MCH6337-TL-W

Description
MCH6337 - P-Channel Power MOSFET, -20V, -4.5A, 49mOhm, Single MCPH6
Request a Quote Datasheet
Description
MCH6337 - P-Channel Power MOSFET, -20V, -4.5A, 49mOhm, Single MCPH6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MCH6337-TL-W - Rochester Electronics
Newburyport, MA, United States
MCH6337 - P-Channel Power MOSFET, -20V, -4.5A, 49mOhm, Single MCPH6

MCH6337 - P-Channel Power MOSFET, -20V, -4.5A, 49mOhm, Single MCPH6

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MCH6337-TL-W - 1078058-MCH6337-TL-W - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MCH6337-TL-W
1078058-MCH6337-TL-W
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MCH6337-TL-W 1078058-MCH6337-TL-W
Manufacturer: ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1078058-MCH6337-TL-W Packaging: Tape & Reel (TR) Termination: SMD/SMT Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 20 V Input Capacitance: 670 pF Number of Pins: 6 Rise Time: 45 ns Fall Time: 63 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): NTHS5441T1G; MCH6421-TL-W; NTHS5404T1G; SI5513CDC-T1-GE3; SI5935CDC-T1-GE3MCH6 337TLW; Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Schedule B: 8541290080, 8541290080 Max Power Dissipation: 1.5 W Turn-On Delay Time: 8.4 ns Continuous Drain Current (ID): 4.5 A Turn-Off Delay Time: 69 ns Gate to Source Voltage (Vgs): 10 V Rds On Max: 49 mΩ

Manufacturer: ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1078058-MCH6337-TL-W
Packaging: Tape & Reel (TR)
Termination: SMD/SMT
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 20 V
Input Capacitance: 670 pF
Number of Pins: 6
Rise Time: 45 ns
Fall Time: 63 ns
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): NTHS5441T1G; MCH6421-TL-W; NTHS5404T1G; SI5513CDC-T1-GE3; SI5935CDC-T1-GE3MCH6337TLW;
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Schedule B: 8541290080, 8541290080
Max Power Dissipation: 1.5 W
Turn-On Delay Time: 8.4 ns
Continuous Drain Current (ID): 4.5 A
Turn-Off Delay Time: 69 ns
Gate to Source Voltage (Vgs): 10 V
Rds On Max: 49 mΩ

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MCH6337-TL-W - Shenzhen Shengyu Electronics Technology Limited
Futian, China
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Technical Specifications

  Rochester Electronics Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MCH6337-TL-W 1078058-MCH6337-TL-W MCH6337-TL-W MCH6337-TL-W
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - MCH6337-TL-W MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
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