onsemi NTMFS4C805NT1G-01

Description
NTMFS4C805N - Power MOSFET 30 V, 78 A, Single N Channel, SO8 FL
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Description
NTMFS4C805N - Power MOSFET 30 V, 78 A, Single N Channel, SO8 FL
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Datasheet
Datasheet Summary
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The NTMFS4C805N is a 30 V, 78 A single N-channel Power MOSFET in an SO-8 FL package, rated for continuous drain current up to 78 A at TC = 25°C with a maximum RDS(on) of 2.8 mΩ at 10 V gate voltage and 4.0 mΩ at 4.5 V. It features low gate charge, low capacitance, and a thermal resistance of 3.8°C/W junction-to-case. The device is RoHS compliant, Pb-free, and meets maximum ratings for junction temperature from -55°C to +150°C, with a peak avalanche energy of 84 mJ and a pulsed drain current of 174 A. The package is surface-mounted with an exposed drain pad and has dimensions of 5.00 mm x 6.00 mm maximum.

Datasheet Summary
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The NTMFS4C805N is a 30 V, 78 A single N-channel Power MOSFET in an SO-8 FL package, rated for continuous drain current up to 78 A at TC = 25°C with a maximum RDS(on) of 2.8 mΩ at 10 V gate voltage and 4.0 mΩ at 4.5 V. It features low gate charge, low capacitance, and a thermal resistance of 3.8°C/W junction-to-case. The device is RoHS compliant, Pb-free, and meets maximum ratings for junction temperature from -55°C to +150°C, with a peak avalanche energy of 84 mJ and a pulsed drain current of 174 A. The package is surface-mounted with an exposed drain pad and has dimensions of 5.00 mm x 6.00 mm maximum.

Suppliers

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Product
Description
Supplier Links
 - NTMFS4C805NT1G-01 - Rochester Electronics
Newburyport, MA, United States
NTMFS4C805N - Power MOSFET 30 V, 78 A, Single N Channel, SO8 FL

NTMFS4C805N - Power MOSFET 30 V, 78 A, Single N Channel, SO8 FL

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number NTMFS4C805NT1G-01
Package Type SOIC8
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