onsemi NTMFS4C03NT3G-01

Description
NTMFS4C03N - Power MOSFET, Single, N-Channel, SO-8FL 30 V, 2.1 m, 136 A
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Description
NTMFS4C03N - Power MOSFET, Single, N-Channel, SO-8FL 30 V, 2.1 m, 136 A
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Datasheet
Datasheet Summary
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NTMFS4C03N is a single N-channel power MOSFET in an SO-8FL package measuring 5 mm by 6 mm, rated for 30 V drain-to-source voltage and 136 A continuous drain current at 25°C case temperature. It has a maximum on-resistance of 2.1 mΩ at 10 V gate drive and 2.8 mΩ at 4.5 V gate drive. The device supports a pulsed drain current of 352 A and has a power dissipation of 64 W at 25°C case temperature with 1.95 °C/W junction-to-case thermal resistance. It is RoHS compliant, Pb-free, and has an operating junction and storage temperature range of -55°C to 150°C.

Datasheet Summary
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NTMFS4C03N is a single N-channel power MOSFET in an SO-8FL package measuring 5 mm by 6 mm, rated for 30 V drain-to-source voltage and 136 A continuous drain current at 25°C case temperature. It has a maximum on-resistance of 2.1 mΩ at 10 V gate drive and 2.8 mΩ at 4.5 V gate drive. The device supports a pulsed drain current of 352 A and has a power dissipation of 64 W at 25°C case temperature with 1.95 °C/W junction-to-case thermal resistance. It is RoHS compliant, Pb-free, and has an operating junction and storage temperature range of -55°C to 150°C.

Suppliers

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Product
Description
Supplier Links
 - NTMFS4C03NT3G-01 - Rochester Electronics
Newburyport, MA, United States
NTMFS4C03N - Power MOSFET, Single, N-Channel, SO-8FL 30 V, 2.1 m, 136 A

NTMFS4C03N - Power MOSFET, Single, N-Channel, SO-8FL 30 V, 2.1 m, 136 A

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number NTMFS4C03NT3G-01
Polarity N-Channel
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