onsemi NTMFS4C59NT1G-01

Description
NTMFS4C59N - MOSFET - Power, Single N-Channel, SO-8FL 30 V, 52 A
Request a Quote
Description
NTMFS4C59N - MOSFET - Power, Single N-Channel, SO-8FL 30 V, 52 A
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

NTMFS4C59N is a single N-channel MOSFET in an SO-8FL package, rated for 30 V drain-to-source voltage and 52 A continuous drain current at TC=25°C. It features a maximum RDS(on) of 5.8 mΩ at 10 V and 8.5 mΩ at 4.5 V, with a total gate charge of 22.2 nC at VGS=10 V. The device is RoHS compliant, rated for -55°C to +150°C junction temperature, and meets AEC-Q200 qualifications. It supports single-pulse avalanche energy up to 42 mJ and is designed for CPU power delivery and DC-DC converters.

Datasheet Summary
Powered by GS/AI

NTMFS4C59N is a single N-channel MOSFET in an SO-8FL package, rated for 30 V drain-to-source voltage and 52 A continuous drain current at TC=25°C. It features a maximum RDS(on) of 5.8 mΩ at 10 V and 8.5 mΩ at 4.5 V, with a total gate charge of 22.2 nC at VGS=10 V. The device is RoHS compliant, rated for -55°C to +150°C junction temperature, and meets AEC-Q200 qualifications. It supports single-pulse avalanche energy up to 42 mJ and is designed for CPU power delivery and DC-DC converters.

Suppliers

Company
Product
Description
Supplier Links
 - NTMFS4C59NT1G-01 - Rochester Electronics
Newburyport, MA, United States
NTMFS4C59N - MOSFET - Power, Single N-Channel, SO-8FL 30 V, 52 A

NTMFS4C59N - MOSFET - Power, Single N-Channel, SO-8FL 30 V, 52 A

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number NTMFS4C59NT1G-01
Polarity N-Channel
Unlock Full Specs
to access all available technical data