Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210BTM IRFR210BTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 921485-IRFR210BTM Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 2500 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 921485-IRFR210BTM Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 2500 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095
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Datasheet
Datasheet Summary
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The IRFR210B is a 200V N-channel MOSFET designed for high-efficiency switching applications such as DC/DC converters and motor control. It is available in a D-PAK package, measuring 6.60 mm in length, 5.34 mm in width, and 2.30 mm in height. The device has a continuous drain current rating of 2.7 A at 25°C case temperature and an on-state resistance of 1.5 Ω at 10 V gate-source voltage. It features a gate charge of 7.2 nC typical, reverse transfer capacitance of 6.8 pF typical, and 100% avalanche testing. The junction temperature range is -55°C to +150°C, with thermal resistance junction-to-case of 4.9 °C/W. The part meets RoHS standards and is qualified for automotive applications per AEC-Q200.

Datasheet Summary
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The IRFR210B is a 200V N-channel MOSFET designed for high-efficiency switching applications such as DC/DC converters and motor control. It is available in a D-PAK package, measuring 6.60 mm in length, 5.34 mm in width, and 2.30 mm in height. The device has a continuous drain current rating of 2.7 A at 25°C case temperature and an on-state resistance of 1.5 Ω at 10 V gate-source voltage. It features a gate charge of 7.2 nC typical, reverse transfer capacitance of 6.8 pF typical, and 100% avalanche testing. The junction temperature range is -55°C to +150°C, with thermal resistance junction-to-case of 4.9 °C/W. The part meets RoHS standards and is qualified for automotive applications per AEC-Q200.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210BTM - 921485-IRFR210BTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210BTM
921485-IRFR210BTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210BTM 921485-IRFR210BTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 921485-IRFR210BTM Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 2500 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 921485-IRFR210BTM
Series: *
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

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Technical Specifications

  Win Source Electronics
Product Category Power MOSFET
Product Number 921485-IRFR210BTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210BTM
Package Type SOT3
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