The IRFB4110GPbF is a HEXFET power MOSFET in a TO-220AB package designed for high-efficiency synchronous rectification and high-speed switching in power supplies. It has a drain-to-source breakdown voltage of 100 V, a continuous drain current of 180 A at 25°C (silicon limited), and a maximum power dissipation of 370 W. The on-resistance is 3.7 mΩ at 10 V gate-source voltage and 75 A drain current. The device features a single-pulse avalanche energy rating of 190 mJ and is qualified for industrial use. The TO-220AB package is not recommended for surface mount applications.
HEXFET Power MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRFB4110GPBFXKMA1 |
| Package Type | TO220-3 |
