onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors NJVMJB42CT4G

Description
Win Source Part Number: 1356727-NJVMJB42CT4G Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -65°C ~ 150°C (TJ) Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Tape & Reel Product Status: Active Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK Base Product Number: NJVMJB42 Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA Frequency - Transition: 3MHz Power - Max: 2 W
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Description
Win Source Part Number: 1356727-NJVMJB42CT4G Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -65°C ~ 150°C (TJ) Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Tape & Reel Product Status: Active Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK Base Product Number: NJVMJB42 Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA Frequency - Transition: 3MHz Power - Max: 2 W
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1356727-NJVMJB42CT4G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1356727-NJVMJB42CT4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1356727-NJVMJB42CT4G
Win Source Part Number: 1356727-NJVMJB42CT4G Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -65°C ~ 150°C (TJ) Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Tape & Reel Product Status: Active Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK Base Product Number: NJVMJB42 Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA Frequency - Transition: 3MHz Power - Max: 2 W

Win Source Part Number: 1356727-NJVMJB42CT4G
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: -65°C ~ 150°C (TJ)
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Package: Tape & Reel
Product Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Base Product Number: NJVMJB42
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: PNP
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
Frequency - Transition: 3MHz
Power - Max: 2 W

Buy Now Datasheet
 - NJVMJB42CT4G - Rochester Electronics
Newburyport, MA, United States
6.0 A, 100 V PNP Bipolar Power Transistor

6.0 A, 100 V PNP Bipolar Power Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - NJVMJB42CT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
NJVMJB42CT4GOSTR-ND
Single Bipolar Transistors NJVMJB42CT4GOSTR-ND
Bipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount D²PAK

Bipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount D²PAK

Buy Now Datasheet
Single Bipolar Transistors - NJVMJB42CT4GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
NJVMJB42CT4GOSCT-ND
Single Bipolar Transistors NJVMJB42CT4GOSCT-ND
Bipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount D²PAK

Bipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount D²PAK

Buy Now Datasheet
Single Bipolar Transistors - NJVMJB42CT4GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
NJVMJB42CT4GOSDKR-ND
Single Bipolar Transistors NJVMJB42CT4GOSDKR-ND
Bipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount D²PAK

Bipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount D²PAK

Buy Now Datasheet
Singapore
6.0 A 100 V Bipolar Transistor
276-NJVMJB42CT4G
6.0 A 100 V Bipolar Transistor 276-NJVMJB42CT4G
6.0 A, 100 V PNP Bipolar Power Transistor, D2PAK 2 LEAD, 800-REEL Product overview: NJVMJB42CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6.0 A, 100 V. Search-friendly keywords include transistor, BJT, switching, amplification, 6.0 A, 100 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJB42CT4G can be used for catalog matching and distributor lookup.

6.0 A, 100 V PNP Bipolar Power Transistor, D2PAK 2 LEAD, 800-REEL Product overview: NJVMJB42CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6.0 A, 100 V. Search-friendly keywords include transistor, BJT, switching, amplification, 6.0 A, 100 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJB42CT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NJVMJB42CT4G
Bipolar Transistors - BJT NJVMJB42CT4G
Bipolar Transistors - BJT BIP PNP 6A 100V TR

Bipolar Transistors - BJT BIP PNP 6A 100V TR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NJVMJB42CT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NJVMJB42CT4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NJVMJB42CT4G
TRANS PNP 100V 6A D2PAK

TRANS PNP 100V 6A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Power MOSFET Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1356727-NJVMJB42CT4G NJVMJB42CT4G NJVMJB42CT4GOSTR-ND 276-NJVMJB42CT4G NJVMJB42CT4G NJVMJB42CT4G
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Single Bipolar Transistors 6.0 A 100 V Bipolar Transistor Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP
Package Type SOT3 D2PAK 2 LEAD TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IC(max) 6000 milliamps 0.7000 milliamps 6000 milliamps
Power Gain 15 dB
Operating Frequency 3 MHz
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