Win Source Part Number: 1356727-NJVMJB42CT4G
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: -65°C ~ 150°C (TJ)
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Package: Tape & Reel
Product Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Base Product Number: NJVMJB42
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: PNP
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
Frequency - Transition: 3MHz
Power - Max: 2 W
6.0 A, 100 V PNP Bipolar Power Transistor
Bipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount D²PAK
Bipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount D²PAK
Bipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount D²PAK
6.0 A, 100 V PNP Bipolar Power Transistor, D2PAK 2 LEAD, 800-REEL Product overview: NJVMJB42CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6.0 A, 100 V. Search-friendly keywords include transistor, BJT, switching, amplification, 6.0 A, 100 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJB42CT4G can be used for catalog matching and distributor lookup.
Bipolar Transistors - BJT BIP PNP 6A 100V TR
TRANS PNP 100V 6A D2PAK
| Win Source Electronics | Rochester Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Power MOSFET | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1356727-NJVMJB42CT4G | NJVMJB42CT4G | NJVMJB42CT4GOSTR-ND | 276-NJVMJB42CT4G | NJVMJB42CT4G | NJVMJB42CT4G |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors | Single Bipolar Transistors | 6.0 A 100 V Bipolar Transistor | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | PNP | PNP | PNP | |||
| Package Type | SOT3 | D2PAK 2 LEAD | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |||
| IC(max) | 6000 milliamps | 0.7000 milliamps | 6000 milliamps | |||
| Power Gain | 15 dB | |||||
| Operating Frequency | 3 MHz |