Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3813PBF IRLB3813PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 040800-IRLB3813PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Family Name: IRLB3813 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 260A (Tc) Gate-Source Threshold Voltage: 2.35V @ 150μA Max Gate Charge: 86nC @ 4.5V Max Input Capacitance: 8420pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.95 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): BUK653R3-30C,127; BUK653R3-30C; BUK952R8-30B; Introduction Date: July 03, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 040800-IRLB3813PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Family Name: IRLB3813 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 260A (Tc) Gate-Source Threshold Voltage: 2.35V @ 150μA Max Gate Charge: 86nC @ 4.5V Max Input Capacitance: 8420pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.95 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): BUK653R3-30C,127; BUK653R3-30C; BUK952R8-30B; Introduction Date: July 03, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3813PBF - 040800-IRLB3813PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3813PBF
040800-IRLB3813PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3813PBF 040800-IRLB3813PBF
Manufacturer: Infineon Technologies Win Source Part Number: 040800-IRLB3813PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Family Name: IRLB3813 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 260A (Tc) Gate-Source Threshold Voltage: 2.35V @ 150μA Max Gate Charge: 86nC @ 4.5V Max Input Capacitance: 8420pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.95 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): BUK653R3-30C,127; BUK653R3-30C; BUK952R8-30B; Introduction Date: July 03, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 040800-IRLB3813PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Family Name: IRLB3813
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 260A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 150μA
Max Gate Charge: 86nC @ 4.5V
Max Input Capacitance: 8420pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.95 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): BUK653R3-30C,127; BUK653R3-30C; BUK952R8-30B;
Introduction Date: July 03, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRLB3813PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLB3813PBF-ND
Single FETs, MOSFETs IRLB3813PBF-ND
N-Channel 30V 260A (Tc) 230W (Tc) Through Hole TO-220AB

N-Channel 30V 260A (Tc) 230W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
30V 260A MOSFET Transistor
278-IRLB3813PBF
30V 260A MOSFET Transistor 278-IRLB3813PBF
MOSFET N-CH 30V 260A TO220AB Product overview: IRLB3813PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 260A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 260A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLB3813PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 260A TO220AB Product overview: IRLB3813PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 260A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 260A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLB3813PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 7259313 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7259313
MOSFETs 7259313
MOSFET N-Channel 30V 260A TO220AB

MOSFET N-Channel 30V 260A TO220AB

Supplier's Site
MOSFETs - 9134032 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9134032
MOSFETs 9134032
MOSFET N-Channel 30V 260A TO220AB

MOSFET N-Channel 30V 260A TO220AB

Supplier's Site
MOSFETs - 7259313P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7259313P
MOSFETs 7259313P
MOSFET N-Channel 30V 260A TO220AB

MOSFET N-Channel 30V 260A TO220AB

Supplier's Site
 - IRLB3813PBF - Rochester Electronics
Newburyport, MA, United States
IRLB3813 - 12V-300V N-Channel Power MOSFET

IRLB3813 - 12V-300V N-Channel Power MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - IRLB3813PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRLB3813PBF
Single FETs, MOSFETs IRLB3813PBF
MOSFET N-CH 30V 260A TO220AB

MOSFET N-CH 30V 260A TO220AB

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg

MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRLB3813PBF
Triode/MOS Tube/Transistor >> MOSFETs IRLB3813PBF
30V 260A 1.95mΩ@10V,60A 230W 2.35V@150uA N Channel ITO-220AB-3 MOSFETs ROHS

30V 260A 1.95mΩ@10V,60A 230W 2.35V@150uA N Channel ITO-220AB-3 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLB3813PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLB3813PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLB3813PBF
MOSFET N-CH 30V 260A TO220AB

MOSFET N-CH 30V 260A TO220AB

Supplier's Site
Mosfet Transistor, N Channel, 260 A, 30 V, 0.0016 Ohm, 10 V, 1.9 V Rohs Compliant Infineon - 25R4660 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 260 A, 30 V, 0.0016 Ohm, 10 V, 1.9 V Rohs Compliant Infineon
25R4660
Mosfet Transistor, N Channel, 260 A, 30 V, 0.0016 Ohm, 10 V, 1.9 V Rohs Compliant Infineon 25R4660
MOSFET Transistor, N Channel, 260 A, 30 V, 0.0016 ohm, 10 V, 1.9 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 260 A, 30 V, 0.0016 ohm, 10 V, 1.9 V RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET, 30V, 190A, 57 NC QG, TO220 - 70019222 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, 30V, 190A, 57 NC QG, TO220
70019222
MOSFET, 30V, 190A, 57 NC QG, TO220 70019222
MOSFET, 30V, 190A, 57 NC QG, TO220

MOSFET, 30V, 190A, 57 NC QG, TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. Rochester Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 040800-IRLB3813PBF IRLB3813PBF-ND 278-IRLB3813PBF 7259313 7259313P IRLB3813PBF IRLB3813PBF IRLB3813PBF IRLB3813PBF IRLB3813PBF 25R4660 70019222
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3813PBF Single FETs, MOSFETs 30V 260A MOSFET Transistor MOSFETs MOSFETs Single FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 260 A, 30 V, 0.0016 Ohm, 10 V, 1.9 V Rohs Compliant Infineon MOSFET, 30V, 190A, 57 NC QG, TO220
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts 30 volts 30 volts
PD 230000 milliwatts 230 milliwatts 230000 milliwatts 230000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 Tube TO-220; To-220ab TO-220; TO-220 TO22 TO-220; TO-220-3 TO-220 TO-220; TO-220-3 TO-3
Unlock Full Specs
to access all available technical data