MOSFET N-CH 30V 260A TO220AB Product overview: IRLB3813PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 260A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 260A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLB3813PBF can be used for catalog matching and distributor lookup.
N-Channel 30V 260A (Tc) 230W (Tc) Through Hole TO-220AB
MOSFET N-Channel 30V 260A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 040800-IRLB3813PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Family Name: IRLB3813
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 260A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 150μA
Max Gate Charge: 86nC @ 4.5V
Max Input Capacitance: 8420pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.95 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): BUK653R3-30C,127; BUK653R3-30C; BUK952R8-30B;
Introduction Date: July 03, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
IRLB3813 - 12V-300V N-Channel Power MOSFET
MOSFET N-CH 30V 260A TO220AB
MOSFET Transistor, N Channel, 260 A, 30 V, 0.0016 ohm, 10 V, 1.9 V RoHS Compliant: Yes
MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
MOSFET N-CH 30V 260A TO220AB
MOSFET, 30V, 190A, 57 NC QG, TO220
30V 260A 1.95mΩ@10V,60A 230W 2.35V@150uA N Channel ITO-220AB-3 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Rochester Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRLB3813PBF | IRLB3813PBF-ND | 7259313 | 7259313P | 040800-IRLB3813PBF | IRLB3813PBF | IRLB3813PBF | 25R4660 | IRLB3813PBF | IRLB3813PBF | 70019222 | IRLB3813PBF |
| Product Name | 30V 260A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3813PBF | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 260 A, 30 V, 0.0016 Ohm, 10 V, 1.9 V Rohs Compliant Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, 30V, 190A, 57 NC QG, TO220 | Triode/MOS Tube/Transistor >> MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||||||
| Transconductance | 0.1400 kS | |||||||||||
| PD | 230 milliwatts | 230000 milliwatts | 230000 milliwatts | 230000 milliwatts |
