onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU120ATU IRFU120ATU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1047196-IRFU120ATU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 480pF @ 25V
Maximum Rds On at Id,Vgs: 200 mOhm @ 4.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

8.4A, 100V, 0.2ohm, N-Channel Power MOSFET, TO-251

MOSFET N-CH 100V 8.4A IPAK Product overview: IRFU120ATU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU120ATU can be used for catalog matching and distributor lookup.

N-Channel 100V 8.4A (Tc) 2.5W (Ta), 32W (Tc) Through Hole I-PAK