The MJE703G is a PNP Darlington transistor designed for general-purpose amplifier and low-speed switching applications. It features a high DC current gain with a typical hFE of 2000 at a collector current of 2.0 A. The device has a maximum collector-emitter voltage of 80 V and can handle a collector current of up to 4.0 A, with a total power dissipation of 40 W at a case temperature of 25¬8C. The transistor is constructed with built-in base-emitter resistors to limit leakage and is available in a TO-225AA package. It operates within a temperature range of -55¬8C to +150¬8C and is compliant with RoHS standards. The MJE703G is suitable for applications requiring high gain and power handling capabilities.
TRANS PNP DARL 80V 4A TO126
Manufacturer: ON Semiconductor
Win Source Part Number: 884917-MJE703G
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Bipolar (BJT) Transistor PNP - Darlington 80 V 4 A - 40 W Through Hole TO-126
Package: TO-225AA, TO-126-3
Package: Bulk
Mounting: Through Hole
Family Name: MJE703
Categories: Discrete Semiconductor Products
Case / Package: TO-126
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 1 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: MJE703G-ND, MJE703GOS
Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-126
4.0 A, 80 V PNP Darlington Bipolar Power Transistor
Darlington Transistors 4A 80V Bipolar Power PNP
DARLINGTON TRANSISTOR, PNP, -80V, TO-225; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-RoHS Compliant: Yes
750@3V,2A 80V PNP 4A 40W TO-225-3 Darlington Transistors ROHS
TRANS PNP DARL 80V 4A TO126
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Rochester Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Power MOSFET | Darlington Transistors | Darlington Transistors | Darlington Transistors | Bipolar RF Transistors |
| Product Number | MJE703G | 884917-MJE703G | MJE703GOS-ND | MJE703G | MJE703G | 26K4471 | MJE703G | MJE703G |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MJE703G | Single Bipolar Transistors | Darlington Transistors | Darlington Transistor, Pnp, -80V, To-225; Transistor Polarity Onsemi | Triode/MOS Tube/Transistor >> Darlington Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | PNP - Darlington; PNP | PNP | PNP | PNP | PNP | |||
| Package Type | TO-225AA, TO-126-3 | SOT3; TO-126 | TO-225AA, TO-126-3 | TO-225 | TO-3 | |||
| IC(max) | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | ||||
| VCEO | 80 volts | 80 volts | 80 volts | 80 volts | ||||
| Output Power | 40 watts |
