The MJE703G is a PNP Darlington transistor designed for general-purpose amplifier and low-speed switching applications. It features a high DC current gain with a typical hFE of 2000 at a collector current of 2.0 A. The device has a maximum collector-emitter voltage of 80 V and can handle a collector current of up to 4.0 A, with a total power dissipation of 40 W at a case temperature of 25¬8C. The transistor is constructed with built-in base-emitter resistors to limit leakage and is available in a TO-225AA package. It operates within a temperature range of -55¬8C to +150¬8C and is compliant with RoHS standards. The MJE703G is suitable for applications requiring high gain and power handling capabilities.
Manufacturer: ON Semiconductor
Win Source Part Number: 884917-MJE703G
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Bipolar (BJT) Transistor PNP - Darlington 80 V 4 A - 40 W Through Hole TO-126
Package: TO-225AA, TO-126-3
Package: Bulk
Mounting: Through Hole
Family Name: MJE703
Categories: Discrete Semiconductor Products
Case / Package: TO-126
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 1 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: MJE703G-ND, MJE703GOS
4.0 A, 80 V PNP Darlington Bipolar Power Transistor
PNP Darlington Power Transistor, 80V, 4A, TO-225 Product overview: MJE703G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE703G can be used for catalog matching and distributor lookup.
TRANS PNP DARL 80V 4A TO126
Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-126
750@3V,2A 80V PNP 4A 40W TO-225-3 Darlington Transistors ROHS
Darlington Transistors 4A 80V Bipolar Power PNP
TRANS PNP DARL 80V 4A TO126
DARLINGTON TRANSISTOR, PNP, -80V, TO-225; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-RoHS Compliant: Yes
| Win Source Electronics | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Darlington Transistors | Darlington Transistors | Bipolar RF Transistors | Darlington Transistors |
| Product Number | 884917-MJE703G | MJE703G | 276-MJE703G | MJE703G | MJE703GOS-ND | MJE703G | MJE703G | MJE703G | 26K4471 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - MJE703G | 80V 4A Bipolar Transistor | Single Bipolar Transistors | Single Bipolar Transistors | Triode/MOS Tube/Transistor >> Darlington Transistors | Darlington Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Darlington Transistor, Pnp, -80V, To-225; Transistor Polarity Onsemi | |
| Polarity | PNP | PNP | PNP - Darlington; PNP | PNP | PNP | PNP | |||
| Package Type | SOT3; TO-126 | TO-225 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-3 | ||||
| Packing Method | Bulk; Bulk | Bulk; Bulk | |||||||
| IC(max) | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | ||||
| VCEO | 80 volts | 80 volts | 80 volts | 80 volts | 80 volts |
