Nexperia B.V. 50 V, 2 A NPN high power bipolar transistor MJD2873J

Description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD2873 series Low collector emitter saturation voltage Fast switching speeds Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement
Request a Quote Datasheet
Description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD2873 series Low collector emitter saturation voltage Fast switching speeds Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
50 V, 2 A NPN high power bipolar transistor - MJD2873J - Nexperia B.V.
Nijmegen, Netherlands
50 V, 2 A NPN high power bipolar transistor
MJD2873J
50 V, 2 A NPN high power bipolar transistor MJD2873J
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD2873 series Low collector emitter saturation voltage Fast switching speeds Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • High thermal power dissipation capability
  • High energy efficiency due to less heat generation
  • Electrically similar to popular MJD2873 series
  • Low collector emitter saturation voltage
  • Fast switching speeds

Applications

  • Power management
  • Load switch
  • Linear mode voltage regulator
  • Constant current drive backlighting application
  • Motor drive
  • Relay replacement
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1377133-MJD2873J - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1377133-MJD2873J
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1377133-MJD2873J
Win Source Part Number: 1377133-MJD2873J Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 48 pct. MSL Level: 3 (168 Hours) Mfr: Nexperia USA Inc. Package: Tape & Reel Product Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Base Product Number: MJD2873 Mounting Type: Surface Mount HTSUS: 8541.29.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA Frequency - Transition: 65MHz Power - Max: 1.6 W

Win Source Part Number: 1377133-MJD2873J
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 48 pct.
MSL Level: 3 (168 Hours)
Mfr: Nexperia USA Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Product Number: MJD2873
Mounting Type: Surface Mount
HTSUS: 8541.29.0075
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 65MHz
Power - Max: 1.6 W

Buy Now Datasheet
Single Bipolar Transistors - 1727-MJD2873JDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-MJD2873JDKR-ND
Single Bipolar Transistors 1727-MJD2873JDKR-ND
Bipolar (BJT) Transistor NPN 50V 2A 65MHz 1.6W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 50V 2A 65MHz 1.6W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - 1727-MJD2873JTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-MJD2873JTR-ND
Single Bipolar Transistors 1727-MJD2873JTR-ND
Bipolar (BJT) Transistor NPN 50V 2A 65MHz 1.6W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 50V 2A 65MHz 1.6W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - 1727-MJD2873JCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-MJD2873JCT-ND
Single Bipolar Transistors 1727-MJD2873JCT-ND
Bipolar (BJT) Transistor NPN 50V 2A 65MHz 1.6W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 50V 2A 65MHz 1.6W Surface Mount DPAK

Buy Now Datasheet
 - MJD2873J - Rochester Electronics
Newburyport, MA, United States
50 V, 2 A NPN high power bipolar transistor

50 V, 2 A NPN high power bipolar transistor

Supplier's Site Datasheet
Single Bipolar Transistors - MJD2873J - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD2873J
Single Bipolar Transistors MJD2873J
TRANS NPN 50V 2A DPAK

TRANS NPN 50V 2A DPAK

Supplier's Site Datasheet
Transistor, Bipolar, Npn, 50V, 2A/to-252 Rohs Compliant Nexperia - 57AJ0134 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Npn, 50V, 2A/to-252 Rohs Compliant Nexperia
57AJ0134
Transistor, Bipolar, Npn, 50V, 2A/to-252 Rohs Compliant Nexperia 57AJ0134
TRANSISTOR, BIPOLAR, NPN, 50V, 2A/TO-252 ROHS COMPLIANT: YES

TRANSISTOR, BIPOLAR, NPN, 50V, 2A/TO-252 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD2873J - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD2873J
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD2873J
TRANS NPN 50V 2A DPAK

TRANS NPN 50V 2A DPAK

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey Rochester Electronics ODG (Origin Data Global) Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Power Bipolar Transistors Transistors Transistors Power MOSFET Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MJD2873J 1377133-MJD2873J 1727-MJD2873JDKR-ND MJD2873J MJD2873J 57AJ0134 MJD2873J
Product Name 50 V, 2 A NPN high power bipolar transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Single Bipolar Transistors Single Bipolar Transistors Transistor, Bipolar, Npn, 50V, 2A/to-252 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
hfe 360
VCEO 50 volts 50 volts 50 volts
IC(max) 2 milliamps 2000 milliamps 2000 milliamps
PD 15 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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